TIM7785-8UL

TRANSISTOR X BAND GaAs N-CHANNEL RF POWER MOSFET HERMETIC SEALED 2-11D1B 2 PIN FET RF Power

Part Number: TIM7785-8UL
Manufacturer: TOSHIBA
Condition: ORIGINAL & NEW
Lead Time: IN STOCK
  • Manufacturer Part Number:

    TIM7785-8UL

  •  
  • Pbfree Code:

     Yes

  •  
  • Rohs Code:

     Yes

  •  
  • Part Life Cycle Code:

    Active

  • Ihs Manufacturer:

    TOSHIBA CORP

  •  
  • Package Description:

    HERMETIC SEALED, 2-11D1B, 2 PIN

  •  
  • Pin Count:

    2

  •  
  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  •  
  • Risk Rank:

    5.04

  •  
  • Case Connection:

    SOURCE

  •  
  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    15 V

  •  
  • Drain Current-Max (Abs) (ID):

    7 A

  •  
  • Drain Current-Max (ID):

    7 A

  •  
  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    X BAND

  •  
  • JESD-30 Code:

    R-CDFM-F2

  •  
  • Number of Elements:

    1

  •  
  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  •  
  • Operating Temperature-Max:

    175 °C

  •  
  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  •  
  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  •  
  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  •  
  • Polarity/Channel Type:

    N-CHANNEL

  •  
  • Power Dissipation Ambient-Max:

    37.5 W

  • Qualification Status:

    Not Qualified

  •  
  • Subcategory:

    Other Transistors

  •  
  • Surface Mount:

    YES

  •  
  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  •  
  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  •  
  • Transistor Application:

    AMPLIFIER

  •  
  • Transistor Element Material:

    GALLIUM ARSENIDE